R.W. Gammon, E. Courtens, et al.
Physical Review B
Impurities and structural defects have a strong influence on the kinetics of thin film reactions. The authors have investigated the effect of Cu on the kinetics of formation and microstructure of Al//3Ti in the temperature range of 375 degree -450 degree C. They found that the presence of 1 weight percent Cu in the Al changes both the activation energy and the pre-exponential factor of the growth law. At the same time, the Cu influences the microstructure of the growing Al//3Ti phase and smoothens the reaction interface. The results are discussed in terms of possible diffusion mechanisms in Al//3Ti.
R.W. Gammon, E. Courtens, et al.
Physical Review B
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
K.A. Chao
Physical Review B