PaperEffects of higher sub-band occupation in (100) Si inversion layersW.E. Howard, F. FangPhysical Review B
PaperFloating gate technique as a thermodynamic probe of two-dimensional electron systemsA.M. Dabiran, F. Fang, et al.Surface Science
PaperLow-temperature transport and photoconductivity response of high mobility Si-SiGe heterostructures in strong magnetic fieldsR.G. Clark, R.B. Dunford, et al.Physica B: Condensed Matter
Conference paperNEW MICROWAVE INDUCED RESONANCES IN THE CONDUCTANCE OF A GaAs/Ga//1// minus //xAl//xAs HETEROJUNCTION.E.J. Pakulis, F. Fang, et al.ICPS Physics of Semiconductors 1984
