R. Ghez, M.B. Small
JES
The electrical resistivity of EuO has been measured from room temperature to 70 K and at pressures up to 250 kbar. A semiconductor-to-semiconductor transition is observed around 140 kbar at room temperature, and the conduction remains activated with a narrow gap up to 250 kbar. The magnetic transition temperature is observed to rise rapidly with pressure below 100 kbar but to saturate near 200 K in the 100 250-kbar range. © 1987 The American Physical Society.
R. Ghez, M.B. Small
JES
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
T.N. Morgan
Semiconductor Science and Technology