Sung Ho Kim, Oun-Ho Park, et al.
Small
The electrical resistivity of EuO has been measured from room temperature to 70 K and at pressures up to 250 kbar. A semiconductor-to-semiconductor transition is observed around 140 kbar at room temperature, and the conduction remains activated with a narrow gap up to 250 kbar. The magnetic transition temperature is observed to rise rapidly with pressure below 100 kbar but to saturate near 200 K in the 100 250-kbar range. © 1987 The American Physical Society.
Sung Ho Kim, Oun-Ho Park, et al.
Small
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
Mark W. Dowley
Solid State Communications