The DX centre
T.N. Morgan
Semiconductor Science and Technology
The moderately heavy-electron compound URu2Si2 is known to exhibit two electronic phase transitions at low temperatures, one to an antiferromagnetically ordered state at TN=17.5 K followed by another to a superconducting state at Tc1.5 K. The shape of the specific-heat anomaly at TN, which is reminiscent of a second-order BCS-type mean-field transition, suggests the formation of a spin- or charge-density wave opening a gap over part of the Fermi surface. The effect of chemical substitution of the transition metals M=Re, Tc, Os, Rh, and Ir for Ru in URu2Si2 has been investigated by means of electrical resistivity, magnetic susceptibility, and specific-heat measurements in URu2-xMxSi2 for x0.2. The anomaly associated with the 17.5 K transition involves a very small magnetic entropy and is smeared out by very small concentrations of the M substituent. An inverse correlation between Tc and TN in the Rh- and Ir-doped materials for x<0.01 and in the Os-doped series for x<0.1 is consistent with the picture of two electronic transitions competing for states at the Fermi level. © 1990 The American Physical Society.
T.N. Morgan
Semiconductor Science and Technology
A. Krol, C.J. Sher, et al.
Surface Science
Julien Autebert, Aditya Kashyap, et al.
Langmuir
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992