J.L. Hedrick, M. Trollsas, et al.
American Chemical Society, Polymer Preprints, Division of Polymer Chemistry
The electrical and interfacial properties of gold-polyimide-silicon structures were studied experimentally by measuring the capacitance-voltage (C-V) characteristics. Two different polyimides of PMDA-ODA (synthesized from pyromellitic dianhydride and oxydianiline) and BTDA-ODA (from benzophenone tetracarboxylic dianhydride and oxydianiline), respectively, were employed. Polyimide coatings on n-type silicon (with a doping level N=5×10 14 cm-3) were prepared by spin coating followed by thermal cure to range from 0.4 to 2.1 μm in thickness. The resulting high frequency C-V plots of these structures were well defined and could be described by the basic theory on metal-insulator-semiconductor (MIS) devices. Distinct differences in the C-V characteristics were observed, depending upon the polyimides. PMDA-ODA dielectrics resulted in C-V hysteresis, believed to be caused by charge injection. On the other hand, BTDA-ODA showed much smaller hysteresis, but some stretch-out in the C-V curve. These differences are attributed to the different interfacial properties of these polyimides in contact with silicon substrates.
J.L. Hedrick, M. Trollsas, et al.
American Chemical Society, Polymer Preprints, Division of Polymer Chemistry
M. Vacatello, D.Y. Yoon
ACS Division of Polymer Chemistry Miami Beach Meeting 1989
S. Herminghaus, D. Boese, et al.
Applied Physics Letters
R.G. Winkler, P.J. Ludovice, et al.
The Journal of Chemical Physics