Study particle emission in vacuum from film deposits
Joseph S. Logan, James J. McGill
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
High-performance electronics would greatly benefit from a versatile III-V integration process on silicon. Unfortunately, integration using hetero epitaxy is hampered by polarity, lattice, and thermal expansion mismatch. This work proposes an alternative concept of III-V integration combining advantages of pulse electrodeposition, template-assisted selective epitaxy, and recrystallization from a melt. Efficient electrodeposition of nano-crystalline and stochiometric InSb in planar templates on Si (001) is achieved. The InSb deposits are analysed by high resolution scanning transmission electron microscopy (HR-STEM) and energy-dispersive X-ray spectroscopy (EDX) before and after melting and recrystallization. The results show that InSb can crystallise epitaxially on Si with the formation of stacking faults. Furthermore, X-ray photoelectron (XPS) and Auger electron (AE) spectroscopy analysis indicate that the InSb crystal size is limited by the impurity concentration resulting from the electrodeposition process.
Joseph S. Logan, James J. McGill
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
C.E. Murray, K.P. Rodbell, et al.
Thin Solid Films
Amol Thakkar, Andrea Antonia Byekwaso, et al.
ACS Fall 2022
Gang Liu, Michael Sun, et al.
ICLR 2025