G. Dujardin, R.E. Walkup, et al.
Science
We demonstrate the feasibility of electron-induced chemical vapor deposition of thin films using low-energy electrons to induce reactions in adsorbed molecular layers. Amorphous hydrogenated silicon, silicon dioxide, silicon oxynitride, and silicon nitride films have been deposited by establishing adsorbed Si2H6, Si2H 6-O2, Si2H6-NO, and Si 2H6-NH3 layers at 100 K and using 300-1000 eV electron beams.
G. Dujardin, R.E. Walkup, et al.
Science
M. Radosavljević, J. Appenzeller, et al.
Applied Physics Letters
Ph. Avouris, R. Kawai, et al.
The Journal of Chemical Physics
T.-C. Shen, Ph. Avouris
Surface Science