J.R. Cooper, W.P. Beyermann, et al.
Physical Review B
The metal-insulator transition in the magnetic semiconductor Gd3-xvxS4, where v stands for vacancies, has been studied by tuning through the transition with the application of a magnetic field at low temperatures. For two samples with x=0.321 and 0.325 the transition is continuous. (T0) is linear in H-Hc which implies that (T0)(E-Ec), where Hc is a critical field and Ec is the mobility edge. This is consistent with new scaling theories of both localization and interaction effects. © 1983 The American Physical Society.
J.R. Cooper, W.P. Beyermann, et al.
Physical Review B
J.L. Tholence, F. Holtzberg, et al.
Journal of Applied Physics
K. Hasselbach, J.R. Kirtley, et al.
Physical Review B
B. Cornut, F. Holtzberg, et al.
Journal of Magnetism and Magnetic Materials