O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
The EPR of the group IV donor Ge in GaP behaves differently from that of the other group IV donors Si and Sn. The spectrum is observable without the application of a uniaxial stress and the g-value (g = 2.000 ± 0.003) and linewidth are independent of the magnitude and the direction of stress. Possible explanations of this anomaly are discussed. © 1972.
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
Hiroshi Ito, Reinhold Schwalm
JES
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MRS Spring 2000
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Technical Digest-International Electron Devices Meeting