Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Paper
Electron paramagnetic resonance of Ge donors in GaP
Abstract
The EPR of the group IV donor Ge in GaP behaves differently from that of the other group IV donors Si and Sn. The spectrum is observable without the application of a uniaxial stress and the g-value (g = 2.000 ± 0.003) and linewidth are independent of the magnitude and the direction of stress. Possible explanations of this anomaly are discussed. © 1972.
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