Nicholas A. Lanzillo, Kisik Choi, et al.
IEEE Electron Device Letters
We present a combined theoretical and experimental study on the electron transport characteristics across several representative interface structures found in back-end-of-line interconnect stacks for advanced semiconductor manufacturing: Cu/Ta(N)/Co/Cu and Cu/Ta(N)/Ru/Cu. In particular, we evaluate the impact of replacing a thin TaN barrier with Ta while considering both Co and Ru as wetting layers. Both theory and experiment indicate a pronounced reduction in vertical resistance when replacing TaN with Ta, regardless of whether a Co or Ru wetting layer is used. This indicates that a significant portion of the total vertical resistance is determined by electron scattering at the Cu/Ta(N) interface. The electronic structure of these nano-sized interconnects is analyzed in terms of the atom-resolved projected density of states and k-resolved transmission spectra at the Fermi level. This work further develops a fundamental understanding of electron transport and material characteristics in nano-sized interconnects.
Nicholas A. Lanzillo, Kisik Choi, et al.
IEEE Electron Device Letters
E. Milosevic, Vimal Kamineni, et al.
IITC 2018
Nicholas A. Lanzillo, Benjamin D. Briggs, et al.
Computational Materials Science
P. Bhosale, J. Maniscalco, et al.
IITC 2018