Conference paper
Silicon VLSI trends-what else besides scaling CMOS to its limit?
T.H. Ning
IPFA 2003
Evidence is presented which indicates that positive oxide charge centers in thin films of thermally grown silicon dioxide are electron traps with an average capture cross section of 3±2×10-13 cm 2 at room temperature and at an average oxide field of about 7×105 V/cm. Positive charge centers of other origins are also expected to be electron traps with about the same capture cross section.
T.H. Ning
IPFA 2003
Bahman Hekmatshoar, T.H. Ning
Electronics Letters
L.L. Chang, H.N. Yu
Proceedings of the IEEE
C.M. Osburn
JES