Conference paper
EFFECT OF CONTACTS ON ADVANCED BIPOLAR DEVICE CHARACTERISTICS.
T.H. Ning
VLSI Science and Technology 1983
Evidence is presented which indicates that positive oxide charge centers in thin films of thermally grown silicon dioxide are electron traps with an average capture cross section of 3±2×10-13 cm 2 at room temperature and at an average oxide field of about 7×105 V/cm. Positive charge centers of other origins are also expected to be electron traps with about the same capture cross section.
T.H. Ning
VLSI Science and Technology 1983
B. Chen, A.S. Yapsir, et al.
ICSICT 1995
T.H. Ning
Solid-State Electronics
T.H. Ning
VLSI-TSA 1989