Peter J. Price
Journal of Applied Physics
A study was performed on electron tunneling from channel to gate. A general treatment based on the Gamow formulation of tunneling escape through an enclosing barrier was developed. Analysis was performed on the escape of electrons from the conducting channel of a field effect transistor through the barrier layer into the gate. The tunneling rate was calculated from the computed wave function of the quantum levels.
Peter J. Price
Journal of Applied Physics
Peter J. Price
Physical Review B
Peter J. Price
Superlattices and Microstructures
Peter J. Price
American Journal of Physics