Device characteristics of high performance Cu2ZnSnS4 solar cell
Oki Gunawan, Tayfun Gokmen, et al.
PVSC 2012
Admittance spectra and drive-level-capacitance profiles of several high performance Cu 2ZnSn(Se,S) 4 (CZTSSe) solar cells with bandgap ∼1.0-1.5 eV are reported. In contrast to the case for Cu(In,Ga)(S,Se) 2, the CZTSSe capacitance spectra exhibit a dielectric freeze out to the geometric capacitance plateau at moderately low frequencies and intermediate temperatures (120-200 K). These spectra reveal important information regarding the bulk properties of the CZTSSe films, such as the dielectric constant and a dominant acceptor with energy level of 0.13-0.2 eV depending on the bandgap. This deep acceptor leads to a carrier freeze out effect that quenches the CZTSSe fill factor and efficiency at low temperatures. © 2012 American Institute of Physics.
Oki Gunawan, Tayfun Gokmen, et al.
PVSC 2012
Giuk Jeong, Jekyung Kim, et al.
Journal of Alloys and Compounds
Tayfun Gokmen, Oki Gunawan, et al.
Applied Physics Letters
Oki Gunawan, Teodor K. Todorov, et al.
Applied Physics Letters