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The instrumental requirements, spectral processing and interpretation for spatially resolved electron energy loss scattering appropriate for electronic structure determinations are reviewed. As an example, the recent Si L2, 3 absorption spectra obtained with 0.2 eV resolution in GeSi alloy layers 5-50 nm thick are discussed. © 1992.
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EMC 2001
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Journal of Organometallic Chemistry
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SPIE Advanced Lithography 2007