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PaperA mechanism for dislocation multiplication at precipitates or inclusions in crystalsJ.W. Matthews, S. MaderScripta Metallurgica
Conference paperSub-30ps ECL circuits using high-fT Si and SiGe epitaxial base SEEW transistorsJ.N. Burghartz, J.H. Comfort, et al.IEDM 1990
Conference paperSelf-aligned bipolar npn transistor with 60 nm epitaxial baseJ.N. Burghartz, S. Mader, et al.IEDM 1989