P. Alnot, D.J. Auerbach, et al.
Surface Science
We have grown for the first time (001)-oriented Germanium on (001) Si by using a perovskite oxide as an insulating epitaxial template. The full structures were grown by molecular beam epitaxy. We could successfully demonstrate a fully epitaxial approach to integrate a Germanium-on-insulator (GOI) structure on Si wafers. © 2007 Elsevier B.V. All rights reserved.
P. Alnot, D.J. Auerbach, et al.
Surface Science
M.A. Lutz, R.M. Feenstra, et al.
Surface Science
J.H. Stathis, R. Bolam, et al.
INFOS 2005
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020