The DX centre
T.N. Morgan
Semiconductor Science and Technology
This letter presents a proof-of-concept process for tunable, self-limiting growth of ultrathin epitaxial NiSi2 films on Si (100). The process starts with metal sputter-deposition, followed by wet etching and then silicidation. By ionizing a fraction of the sputtered Ni atoms and biasing the Si substrate, the amount of Ni atoms incorporated in the substrate after wet etching can be controlled. As a result, the thickness of the NiSi2 films is increased from 4.7 to 7.2 nm by changing the nominal substrate bias from 0 to 600 V. The NiSi2 films are characterized by a specific resistivity around 50 cm. © 2011 The Electrochemical Society.
T.N. Morgan
Semiconductor Science and Technology
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
A. Krol, C.J. Sher, et al.
Surface Science