L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
The valence-band offset between GaAs and AlGaAs has been found to be independent of crystal orientation, as deduced from measurements of the two-dimensional hole densities in Al0.26Ga0.74As/GaAs heterojunctions. An analysis of the charge transfer yields a valence-band offset of 0.39±0.02 of the energy-gap difference. © 1985 The American Physical Society.
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron