Z.A. Weinberg, D.R. Young, et al.
Journal of Applied Physics
Positive charge and surface states are found to accumulate at the Si-SiO2 interface in MOS structures which are illuminated by vacuum ultraviolet photons (≳9 eV) with a negative bias applied to the metal electrode. A series of experiments seems to rule out the obvious explanations for this effect - photon and hot-electron processes. We suggest the possibility that excitons, generated by photon absorption in the SiO2, diffuse to the Si-SiO2 interface where they are separated into a free electron absorbed into the silicon substrate and a hole trapped at the interface.
Z.A. Weinberg, D.R. Young, et al.
Journal of Applied Physics
R.M. Tromp, G.W. Rubloff, et al.
JVSTA
G.W. Rubloff
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
A. Hartstein, Z.A. Weinberg, et al.
Physical Review B