J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
Band dispersions E(k) and critical points of V3Si have been determined by k-selective angle-resolved photoemission with synchrotron radiation. A V-3d band (Δ1,2) which is very close to EF at Γ (Γ12) has been observed which is very flat near Γ along the ΓX direction, in agreement with recent APW calculations. Critical points of valence bands as well as their orbital character and density of states features have been determined. © 1981.
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter
Gregory Czap, Kyungju Noh, et al.
APS Global Physics Summit 2025