Yang Liu, Mathieu Luisier, et al.
IEEE T-ED
We have experimentally determined the extent of wave function spread T QM in Si inversion layers on (100)-oriented surface in metal-oxide-semiconductor field-effect transistors (MOSFETs) using the back gate bias sensitivity of front gate threshold voltage of planar fully depleted silicon-on-insulator (SOI) MOSFETs. We show that the sum of TQM for large positive and negative F is an electrically determined value of the SOI thickness TSI. We find that the electric field dependence of T QM for electrons and holes is given by TQM ∼ F -0.4 and F-0.6, respectively, at high electric fields with TQM being larger for holes at a given F. Larger TQM for holes can be explained by the fact that holes have a smaller effective mass along the confinement direction than electrons in (100) Si. The field dependences of TQM are, however, not consistent with the results of variational calculations that assume single-subband occupancy and predict TQM ∼ F -1/3. The discrepancy likely indicates that the effects of multiple-subband occupation are significant at room temperature, especially for holes. © 2010 American Institute of Physics.
Yang Liu, Mathieu Luisier, et al.
IEEE T-ED
Guy M. Cohen, Amlan Majumdar, et al.
physica status solidi RRL
Jin Cai, Zhibin Ren, et al.
IEEE International SOI Conference 2008
Stephen W. Bedell, Amlan Majumdar, et al.
IEEE Electron Device Letters