INTERACTION BETWEEN Ti AND SiO//2.
C.-Y. Ting, M. Wittmer, et al.
VLSI Science and Technology 1983
We present the first experimental identification of the diffusion mechanisms of Ge in Si. Using thermal nitridation reactions to create either excess self-interstitials or vacancies, it is established that under equilibrium conditions at 1050°C Ge diffusion takes place by both substitutional- interstitial interchange and vacancy mechanisms, with comparable contributions from each. If previous conjectures that Ge diffusion in Si is similar to Si self-diffusion are correct, our findings support the idea that Si self-diffusion takes place by both interstitial and vacancy mechanisms.
C.-Y. Ting, M. Wittmer, et al.
VLSI Science and Technology 1983
D.L. Harame, J.M.C. Stork, et al.
VLSI Technology 1990
M.W. Shafer, R.A. de Groot, et al.
Materials Research Bulletin
M.M. Plechaty, B.L. Olson, et al.
Talanta