Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Comparison of x-ray fluorescence and electron-yield surface extended x-ray absorption fine struction (EXAFS) above the S K-edge for c(22)S on Ni(100) reveals an order of magnitude higher sensitivity for the former technique due to a much lower background. The higher sensitivity of soft x-ray fluorescence EXAFS opens the possibility of structural studies on very dilute atomic species on surfaces (0.1 monolayer) or in the bulk (1019atoms/cm3) of a different material. An EXAFS study on the local structure of S impurities in GaAs is presented as an example of such studies. We derive the local geometry around the S atoms finding two competing configurations of approximately equal population: (1) substitutional S on an As site (2) a complex formed by S on an As site and an As vacancy on the second shell with a S-first neighbor distance relaxation of 0.140.04. The two configurations explain the disparity between implanted S concentration and net electrical activity. © IOP Publishing Ltd.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Fernando Marianno, Wang Zhou, et al.
INFORMS 2021
Julien Autebert, Aditya Kashyap, et al.
Langmuir
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997