A stochastic model for impact of LER on BEOL TDDB
Ramachandran Muralidhar, Ernest Y. Wu, et al.
IRPS 2017
Device dimension scaling and process complexity have revealed new phenomena such as post-breakdown (BD) and variability issues in advanced technology nodes. Coupling of the first BD phenomena and their methodologies discussed in part I with the development of post-BD methodologies allows engineers to use device stress-data to accurately predict the product failure lifetime. The statistical modeling and new advances in understanding the root cause of variability issues have mitigated these seemingly uncontrollable 'catastrophes' so that the scaling of the advanced technology process can continue its successful path forward. These two important aspects of dielectric BD will be reviewed in part II.
Ramachandran Muralidhar, Ernest Y. Wu, et al.
IRPS 2017
Ernest Y. Wu, Andrew Kim, et al.
IRPS 2018
Ernest Y. Wu, Jordi Sune
IIRW 2013
Mario Lanza, H.-S. Philip Wong, et al.
Advanced Electronic Materials