Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
We report results of photoluminescence measurements in high purity n- and p-type GaAs at low temperatures which substantiate the identification of the 1.5133 eV emission line with the recombination of free valence band holes with electrons bound to shallow donors. © 1974.
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
Mark W. Dowley
Solid State Communications