Shu-Jen Han, Josephine Chang, et al.
IEDM 2010
One key challenge of realizing practical high-performance electronic devices based on single-walled carbon nanotubes is to produce electronically pure nanotube arrays with both a minuscule and uniform inter-tube pitch for sufficient device-packing density and homogeneity. Here we develop a method in which the alternating voltage-fringing electric field formed between surface microelectrodes and the substrate is utilized to assemble semiconducting nanotubes into well-aligned, ultrahigh-density and submonolayered arrays, with a consistent pitch as small as 21±6 nm determined by a self-limiting mechanism, based on the unique field focusing and screening effects of the fringing field. Field-effect transistors based on such nanotube arrays exhibit record high device transconductance (>50 μS μm-1) and decent on current per nanotube (∼1μA per tube) together with high on/off ratios at a drain bias of -1V.
Shu-Jen Han, Josephine Chang, et al.
IEDM 2010
Jatinder Kumar, Marcelo A. Kuroda, et al.
Applied Physics Letters
Qing Cao, Jerry Tersoff, et al.
Science
Bhupesh Chandra, Ali Afzali, et al.
Chemistry of Materials