Future of PECVD and spin-on ultra low-k materials

A few years ago, we developed at the IBM Almaden Research Center, the concept of introducing carbon in low-k materials in the form of bridging units between the silicon atoms and not as a pendant methyl group. Since then, this strategy has been widely adopted among the semi-conductor industry and the most advanced spin-on and PECVD ULK materials are now based on this model. This paper addresses the concept of designing ultra low-k bridged materials to achieve the best mechanical properties, to control the pore size and connectivity and to prevent plasma damage. © 2011 IEEE.