Nils J. Engelsen, Sergey A. Fedorov, et al.
CLEO 2019
Conference paper
Gallium phosphide microresonator frequency combs
Abstract
We demonstrate the first microresonator frequency combs in GaP, a III-V semiconductor transparent above 549 nm. High Kerr nonlinearity (∼10 -17 m 2 /W) yields THz combs at 1550 nm with a 3-mW power threshold and >100-nm bandwidth.
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