M.A. Lutz, R.M. Feenstra, et al.
Surface Science
It is shown that the primitive intrinsic defects in amorphous Si (a-Si) are threefold- and fivefold-coordinated Si atoms. A variety of experimental and theoretical information indicates that both these defects are likely to play a role in determining the properties of a-Si. Both have localized states in the energy gap. Electron-spin-resonance (ESR) data show that the dominant paramagnetic defect is more likely to be fivefold-coordinated Si (floating bond). A luminescence peak at ∼0.9 eV, on the other hand, is likely to be due to threefold-coordinated Si (dangling bond). In hydrogenated a-Si (a-Si), interstitial H (either at a "bond center" or "channel" site) may also have a state in the gap. © 1987.
M.A. Lutz, R.M. Feenstra, et al.
Surface Science
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
R. Ghez, M.B. Small
JES
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters