G. Lucovsky, M.H. Brodsky, et al.
Physical Review B
Amorphous hydrogenated silicon has been deposited by plasma decomposition of Si2H6 and Si3H8. A major feature of the process is a deposition rate enhancement of over a factor of 20 compared to monosilane. The resulting films are compositionally similar to monosilane-produced intrinsic a-Si(H), but films deposited at 300°C substrate temperature show greater photoconductivity. On the basis of our deposition experiments and the known thermolysis chemistry of the silanes, a conjectural model for the deposition process is presented.
G. Lucovsky, M.H. Brodsky, et al.
Physical Review B
J.F. Bringley, B.A. Scott, et al.
NIST Special Publication
J.F. Ziegler, M.H. Brodsky
Journal of Applied Physics
L. Kuhn, M.L. Dakss, et al.
Applied Physics Letters