Nanomembrane β-Ga2O3 high-voltage field effect transistors
Wan Sik Hwang, Amit Verma, et al.
DRC 2013
We report the realization of top-gated graphene nanoribbon field effect transistors (GNRFETs) of ∼10 nm width on large-area epitaxial graphene exhibiting the opening of a band gap of ∼0.14 eV. Contrary to prior observations of disordered transport and severe edge-roughness effects of graphene nanoribbons (GNRs), the experimental results presented here clearly show that the transport mechanism in carefully fabricated GNRFETs is conventional band-transport at room temperature and inter-band tunneling at low temperature. The entire space of temperature, size, and geometry dependent transport properties and electrostatics of the GNRFETs are explained by a conventional thermionic emission and tunneling current model. Our combined experimental and modeling work proves that carefully fabricated narrow GNRs behave as conventional semiconductors and remain potential candidates for electronic switching devices.
Wan Sik Hwang, Amit Verma, et al.
DRC 2013
Wan Sik Hwang, Kristof Tahy, et al.
Applied Physics Letters
Kristof Tahy, Siyuranga Koswatta, et al.
DRC 2009
Pei Zhao, Qin Zhang, et al.
IEEE T-ED