Development of graphene FETs for high frequency electronics
Yu-Ming Lin, Keith Jenkins, et al.
IEDM 2009
Various mesoscopic devices exploit electrostatic side gates for their operation. In this letter, we investigate how voltage biasing of graphene side gates modulates the electrical transport characteristics of a graphene channel. We explore myriads of typical side-gated devices such as symmetric dual-side gates and asymmetric single-side gates, in monolayer and bilayer graphene. The side gates modulate the electrostatic doping in the graphene channel whose effect is reflected in transport measurement. This modulation efficiency is systematically characterized for all our devices and agrees well with the modeling presented. © 2012 IEEE.
Yu-Ming Lin, Keith Jenkins, et al.
IEDM 2009
Yongjin Jiang, Feng Lu, et al.
Physical Review B - CMMP
Marcus Freitag, Tony Low, et al.
Nano Letters
Marcus Freitag, Hsin-Ying Chiu, et al.
Nature Nanotechnology