Gottlieb S. Oehrlein, Kevin K. Chan, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Light emitted from a plasma during reactive ion etching and reflected by the wafer surface at a grazing angle is utilized to determine the remaining film thickness with an accuracy of ±30 Å. This promises a more flexible etching approach, e.g., tailoring the final stage of etching to minimize lattice damage.
Gottlieb S. Oehrlein, Kevin K. Chan, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Gottlieb S. Oehrlein, J. Lennart Lindsöm
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Adam Pranda, Kang Yi Lin, et al.
JVSTA
Gottlieb S. Oehrlein, Kevin K. Chan, et al.
Journal of Applied Physics