Eberhard Spiller, Armin Segmüller
Applied Physics Letters
Epitaxial films of CdTe and (Cd,Mn)Te were grown on (001) GaAs substrates in a vacuum evaporator. Conventional Bragg diffraction indicated that the films had a single orientation, either (a) CdTe(001) ∥ GaAs(001), or (b) CdTe(111) ∥ GaAs(001). Grazing-incidence x-ray diffraction showed that most of the films had both orientations with (a) CdTe[110] ∥ GaAs[110] and (b) CdTe[112̄] ∥ GaAs[110]. Only one of the two possible domains was found in case (b). A mosaic of well-crystallized islands appears to accommodate the large film strain of -12.8% due to the lattice mismatch between CdTe and GaAs.
Eberhard Spiller, Armin Segmüller
Applied Physics Letters
I.C. Noyan, Armin Segmüller
Journal of Applied Physics
R.M. Nicklow, M. Pomerantz, et al.
Physical Review B
M. Wittmer, D.A. Smith, et al.
Applied Physics Letters