Growth of ultra-flat ultra-thin alkali antimonide photocathode films

Abstract

Ultra-flat, ultra-thin alkali antimonide photocathodes with high crystallinity can exhibit high quantum efficiency and low mean transverse energy of outgoing electrons, which are essential requirements for a variety of applications for photocathode materials. Here, we investigate the growth of Cs3Sb on graphene-coated 4H-SiC (Gr/4H-SiC), 3C-SiC, and Si3N4 substrates. Sb is deposited using pulsed laser deposition, while Cs is deposited thermally and simultaneously. We demonstrate, employing x-ray analysis and quantum efficiency measurements, that this growth method yields atomically smooth Cs3Sb photocathodes with a high quantum efficiency (>10%), even in the ultra-thin limit (<30 nm). For the Si3N4 substrate, film growth is shown to be polycrystalline, while films grown on Gr/4H-SiC show a high degree of ordering with signs of epitaxy.