A.R. Sitaram, D.W. Abraham, et al.
VLSI Technology 2003
Paper
Heater for high Tc oxide superconducting thin-film deposition
Abstract
A design for a heater stage capable of operating in a high oxygen partial pressure is presented. Substrates attached to the stage may be heated up to 900 °C in oxygen partial pressures from 10-3 to 760 Torr. The design of the heater allows easy replacement of all parts.
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