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Rheologica Acta
A method for growing heteroepitaxial Si films on sapphire was developed using a 6 nm thin Al layer at substrate temperature of 600 °C. Subsequently, the growth of Si nanowires was demonstrated on these films at 490 °C without breaking vacuum. We characterized the properties of the Si films by Raman scattering, X-ray diffraction and transmission electron microscopy and show that the crystal quality and dopant control are promising for photovoltaic applications. © 2010 Elsevier B.V.
Thomas E. Karis, C. Mark Seymour, et al.
Rheologica Acta
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
O.F. Schirmer, K.W. Blazey, et al.
Physical Review B
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MRS Proceedings 1983