Michael E. Henderson
International Journal of Bifurcation and Chaos in Applied Sciences and Engineering
We consider the Boltzmann equation describing the charge transport in semiconductor devices, including the scattering of electrons with acoustic and optical phonons. Taking into account that at a high electric field the scattering events are nearly elastic, we develop a formal expansion for the distribution function valid for general band structures. © 1992.
Michael E. Henderson
International Journal of Bifurcation and Chaos in Applied Sciences and Engineering
Matthew A Grayson
Journal of Complexity
Alfred K. Wong, Antoinette F. Molless, et al.
SPIE Advanced Lithography 2000
A.R. Gourlay, G. Kaye, et al.
Proceedings of SPIE 1989