Conference paper
A 5.2 GHz 3.3V SiGe RF transmitter
Jean-Olivier Plouchart, Herschel Ainspan, et al.
EuMC 1999
Circuit design techniques for realizing high-frequency, low-power phase-locked loops (PLL‘s) in monolithic silicon bipolar technology are discussed. A varactor-tuned voltage-controlled oscillator (VCO), an analog phase detector, and a bandgap reference have been utilized as building blocks. A test circuit fabricated in a 2-µm bipolar process exhibited a maximum center frequency of 350 MHz, and the PLL pull-in range was larger than ± 1 percent. The circuit operates from a 5-V supply and dissipates 270 mW. © 1989 IEEE
Jean-Olivier Plouchart, Herschel Ainspan, et al.
EuMC 1999
Herschel A. Ainspan, Charles S. Webster, et al.
ESSCIRC 1998
Woogeun Rhee, Herschel Ainspan, et al.
CICC 2003
Mehmet Soyuer
IEEE Journal of Solid-State Circuits