High-Gain Pseudomorphic InGaAs Base Ballistic Hot-Electron Device

We report on a high-gain ballistic hot-electron device. The GaAs-AlGaAs heterostructure device, with a 21-nm-thick pseudomorphic In0.12Ga0.88As base, had a current gain of 27 at 77 K and 41 at 4.2 K. As characteristically seen in ballistic devices, transfer into the L valleys limited the maximum gain. The T-L valley separation in the strained In0.12Ga0.88As was estimated to be about 380 meV. © 1989 IEEE