High mobility In _0.53Ga _0.47As quantum-well metal oxide semiconductor field effect transistor structures

In this paper, we demonstrate high electron mobility In 0.53Ga 0.47As quantum-well metal oxide semiconductor field effect transistor (MOSFET) structures. The Al 2O 3 (gate dielectric) In 0.53Ga 0.47As-In 0.52Al 0.48As (barrier)In 0.53Ga 0.47As (channel) structures were fabricated, and the mobility was obtained by Hall measurements. The structures with in-situ chemical vapor deposition (CVD) Al 2O 3 displayed higher mobility than identical structures fabricated with in situ atomic layer deposition Al 2O 3, which indicates that CVD process resulted in a lower Al 2O 3In 0.53Ga 0.47As interfacial defect density. A gate bias was applied to the structure with CVD Al 2O 3, and a peak mobility of 9243 cm 2V s at a carrier density of 2.7 × 10 12 cm -2 was demonstrated for the structure with a 4 nm In 0.53Ga 0.47As-In 0.52Al 0.48As barrier. A model based on internal phonon scattering and interfacial defect coulomb scattering was developed to explain the experimental data and predict the mobility of In 0.53Ga 0.47As MOSFET structures. © 2012 American Institute of Physics.