A 20dBm E-band power amplifier in SiGe BiCMOS technology
Roee Ben Yishay, Roi Carmon, et al.
EuMIC 2012
Fully integrated chipset at E-band frequencies in a superhetrodyne architecture covering the 81-86 GHz band was designed and fabricated in 0.13 μm SiGe technology. The receiver chip includes an image-reject low-noise amplifier (LNA), RF-to-IF mixer, variable gain IF amplifier, quadrature IF-to-baseband de-modulators, tunable baseband filter, phase-locked loop (PLL), and frequency multiplier by four (quadrupler). The receiver chip achieves maximum gain of 73 dB, 6 dB noise figure, better than -12 dBm IIP3, with more than 65 dB dynamic range, and consumes 600 mW. The transmitter chip includes a power amplifier (PA), image-reject driver, variable RF attenuators, IF-to-RF upconverting mixer, variable gain IF amplifier, quadrature baseband-to-IF modulator, PLL, and frequency quadrupler. It achieves output power at P1dB of 16.6 dBm, Psat of 18.8 dBm on a single-ended output and consumes 1.8 W.
Roee Ben Yishay, Roi Carmon, et al.
EuMIC 2012
Shlomo Shlafman, David Goren, et al.
COMCAS 2011
Oded Katz, Dan A. Ramon, et al.
IEEE Transactions on VLSI Systems
Nadav Mazor, Benny Sheinman, et al.
IEEE MWCL