High speed lateral trench detectors with a junction substrate

In this paper, we propose a junction-substrate LTD structure. Two-dimensional device simulations indicate that the built-in electric field created by the buried junction can effectively block the deep carriers and increase the bandwidth. The buried p-n junction can be realized by conventional techniques such as epitaxy. Preliminary experimental results show significant enhancement in bandwidths in such devices. Further device simulations show that a 50 μm diameter device can achieve a transit time limited bandwidth in excess of 10GHz with an optimized design.