A 26 ps self-aligned epitaxial silicon base bipolar technology
J.H. Comfort, P.F. Lu, et al.
VLSI Technology 1990
This paper presents an ECL circuit with a Darlington configured dynamic current source and active-pull-down emitter-follower stage for low-power high-speed gate array application. The dynamic current source provides a large dynamic current during the switching transient to improve the power delay of the logic stage (current switch). A novel self-biasing scheme for the dynamic current source and the active-pull-down transistor with no additional devices and power in the biasing circuit is described. Based on a 0.8-μm double-poly self-aligned bipolar technology at a power consumption of 1 mW/gate, the circuit offers 28% improvement in the loaded (FI/FO = 3, C = 0.3pF) delay and 42% improvement in the load driving capability compared with the conventional ECL circuit. The design and scaling considerations of the circuit are discussed. © 1993 IEEE
J.H. Comfort, P.F. Lu, et al.
VLSI Technology 1990
B.S. Wu, C.T. Chuang, et al.
IEEE Journal of Solid-State Circuits
Kai-Yap Toh, C.T. Chuang, et al.
ISSCC 1989
C.T. Chuang, Ken Chin
Bipolar Circuits and Technology Meeting 1990