P. Alnot, D.J. Auerbach, et al.
Surface Science
Lateral trench photodetectors (LTD) on silicon-on-insulator (SOI) have been fabricated using a fully CMOS compatible process. High speed (2.0 GHz), high quantum efficiency (51%), and excellent frequency response characteristics have been achieved at 851 nm with a supply voltage of only 3.3 V.
P. Alnot, D.J. Auerbach, et al.
Surface Science
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
Hiroshi Ito, Reinhold Schwalm
JES
John G. Long, Peter C. Searson, et al.
JES