E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
Lateral trench photodetectors (LTD) on silicon-on-insulator (SOI) have been fabricated using a fully CMOS compatible process. High speed (2.0 GHz), high quantum efficiency (51%), and excellent frequency response characteristics have been achieved at 851 nm with a supply voltage of only 3.3 V.
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
Lawrence Suchow, Norman R. Stemple
JES
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
J.A. Barker, D. Henderson, et al.
Molecular Physics