Revanth Kodoru, Atanu Saha, et al.
arXiv
A high surface concentration layer is essential for obtaining good ohmic contact on GaAs devices. Zn diffusion in GaAs using Zn3As2, ZnAs2, Zn3As2 + ZnAs2, and ZnAs2 + As as diffusion sources at low temperatures (600°-730'C) has been studied. The resulting surfaces were reproducible and undamaged, and the surface concentrations were in the 1020 cm-3 range. © 1976, The Electrochemical Society, Inc. All rights reserved.
Revanth Kodoru, Atanu Saha, et al.
arXiv
Kigook Song, Robert D. Miller, et al.
Macromolecules
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.