David B. Mitzi
Journal of Materials Chemistry
High-temperature epitaxy of PtSi/Si(0 0 1) interfaces has been investigated by ultra-high-vacuum transmission electron microscopy for deposition temperatures up to 850°C. At 600°C continuous, polycrystalline, epitaxial films are observed with rectangular grains (10 × 30 nm), with the predominant, preferred orientation PtSi(1 1 0). By 750°C the grains form islands which elongate in the PtSi[0 0 1] direction parallel the Si[1 1 0]. A strong shape anisotropy develops with length-to-width ratios of up to 1 0 0. Interface faceting is detected and observed in all islands by 810°C and the preferred orientation changes to predominantly (1 2 0). The alignment of the PtSi(0 0 2) planes with the Si(2 2 0) planes is preserved at all temperatures and orientations.
David B. Mitzi
Journal of Materials Chemistry
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
Fernando Marianno, Wang Zhou, et al.
INFORMS 2021