P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
A review of hopping conduction in small MOSFET devices at low temperatures is given. The theoretical predictions of Mott, extended to the quasi-one-dimensional limit, will be compared with experiments and it will be shown that in the limit where only a few states exist within a few kBT of the Fermi energy the conduction properties take on a radically different form. Experimental results will be compared to both fluctuation hopping dominated theories as well as resonant tunneling models. © 1986.
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
John G. Long, Peter C. Searson, et al.
JES
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009