Hot-electron-acceptor luminescence in quantum wells. A quantitative measurement of the hole dispersion curves

We have quantitatively measured the dispersion curves of holes in GaAs/AlxGa1-xAs quantum wells using hot-electron-acceptor luminescence in combination with band-edge luminescence. The directionally averaged heavy-hole and light-hole energies are determined for in-plane wave vectors between 3% and 7% of the Brillouin zone in quantum wells of different well width.