Daniel J. Coady, Amanda C. Engler, et al.
ACS Macro Letters
A new method for precise computations on hot electrons in semiconductors is introduced. It combines attributes of Monte Carlo and distribution-function-based methods. Exploratory calculations, with a model semiconductor, are reported, including time dependence of drift velocity, steady-state longitudinal diffusivity and avalanche rate. © 1971.
Daniel J. Coady, Amanda C. Engler, et al.
ACS Macro Letters
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
P. Alnot, D.J. Auerbach, et al.
Surface Science